Semiconductor device
AssigneeFujitsu Limited
InventorTetsuro ISHIGURO
Life of this patent
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Abstract
A semiconductor device including a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with an impurity element that makes the semiconductor material highly resistant; a multilayer intermediate layer formed on the high resistance layer; an electron transit layer formed with a semiconductor material on the multilayer intermediate layer; and an electron supply layer formed with a semiconductor material on the electron transit layer, wherein the multilayer intermediate layer is formed with a multilayer film in which a GaN layer and an AlN layer are alternately laminated.
Claims20
A semiconductor device comprising:
- a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with an impurity element that makes the semiconductor material highly resistant;
- a multilayer intermediate layer formed on the high resistance layer;
- an electron transit layer formed with a semiconductor material on the multilayer intermediate layer;
- and
- an electron supply layer formed with a semiconductor material on the electron transit layer, wherein
- the multilayer intermediate layer is formed with a multilayer film in which a GaN layer and an AlN layer are alternately laminated.
A semiconductor device comprising:
- a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with an impurity element that makes the semiconductor material highly resistant;
- an intermediate layer formed on the high resistance layer;
- an electron transit layer formed with a semiconductor material on the intermediate layer;
- and
- an electron supply layer formed with a semiconductor material on the electron transit layer, wherein
- the intermediate layer is formed with AlGaN, which is expressed as AlXGa1-XN, where 0<X<0.3.
Dependencies are inferred from the claim text.