US 2013/0075784 A1Published application

Semiconductor device and method for manufacturing the same

AssigneeToyota Jidosha Kabushiki Kaisha

InventorTomoharu IKEDA

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Abstract

A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. The diode region includes a first layer embedded in a diode trench reaching a diode drift layer from an upper surface side of the semiconductor substrate, and a second layer which is buried in the first layer and which has a lower end located deeper than a boundary between a diode body layer and the diode drift layer. The second layer pressures the first layer in a direction from inside to outside of the diode trench. A lifetime control region is formed in the diode drift layer at least at the depth of the lower end of the second layer, and a crystal defect density inside the lifetime control region is higher than a crystal defect density outside the lifetime control region.

A semiconductor device comprising a semiconductor substrate in which a diode region and an IGBT region are formed, wherein

the diode region comprises:
a first conductivity type anode layer exposed at an upper surface of the semiconductor substrate,
a first conductivity type diode body layer formed on a lower surface side of the anode layer,
a second conductivity type diode drift layer formed on a lower surface side of the diode body layer,
a second conductivity type cathode layer formed on a lower surface side of the diode drift layer, and having a higher density of second conductivity type impurities than in the diode drift layer,
a first layer disposed within a diode trench reaching the diode drift layer from the upper surface side of the semiconductor substrate, and
a second layer disposed within the first layer, and having a lower end of which located deeper than a boundary between the diode body layer and the diode drift layer,
the IGBT region comprises:
a second conductivity type emitter layer exposed at the upper surface of the semiconductor substrate,
a first conductivity type IGBT body layer formed at a lateral side and a lower surface side of the emitter layer, and having a part of which exposed at the upper surface of the semiconductor substrate,
a second conductivity type IGBT drift layer formed on a lower surface side of the IGBT body layer,
a first conductivity type collector layer formed on a lower surface side of the IGBT drift layer, and
an IGBT gate penetrating the IGBT body layer from the upper surface side of the semiconductor substrate and reaching the IGBT drift layer,
the second layer pressures the first layer in a direction from inside to outside of the diode trench,
a lifetime control region is formed in the diode drift layer at least at a depth of a lower end of the second layer, and
a crystal defect density inside the lifetime control region is higher than a crystal defect density outside the lifetime control region.

13 more elements

Facts

Application

13/616,171Filed 14 Sep 2012

Priority

28 Sep 2011

Published

28 Mar 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 84/811
Characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs: combinations of…
H10D 8/00
Diodes
H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 62/60
Semiconductor bodies, or regions thereof, of devices having potential barriers: impurity distributions or concentrations

Abstract

Claims4