Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate that comprises:
• an n type drift layer,
• a p type body layer on an upper surface side of the drift layer, and
• a high impurity n layer on a lower surface side of the drift layer, the high impurity n layer including hydrogen ion donors as a dopant, and having a higher density of n type impurities than the drift layer, wherein
• a lifetime control region including crystal defects as a lifetime killer is formed in the high impurity n layer and a part of the drift layer,
• a donor peak position, at which a hydrogen ion donor density is highest in the high impurity n layer in a depth direction of the semiconductor substrate, is adjacent or identical to a defect peak position, at which a crystal defect density is highest in the lifetime control region in the depth direction of the semiconductor substrate, and
• the crystal defect density in the defect peak position of the lifetime control region is 1×1012 atoms/cm3 or more.