Radiation heat dissipation led structure and the manufacturing method thereof

A manufacturing method of a radiation heat dissipation LED structure, comprising:

• forming an LED epitaxy layer on a sapphire substrate, wherein the LED epitaxy layer consists of at least an N type semiconductor layer, a semiconductor light emitting layer and a P type semiconductor layer, and the semiconductor light emitting layer emits light when the LED epitaxy layer is forward biased;
• forming a radiation heat dissipation film on a base substrate;
• and
• binding the sapphire substrate and the radiation heat dissipation film by a thermally conductive binding layer to form the radiation heat dissipation LED structure;
• wherein the radiation heat dissipation film consists of a mixture of metal and nonmetal, which consists of at least one of silver, copper, tin, aluminum, titanium, iron and antimony, and one of oxide, nitride and inorganic acid of at least one of boron and carbon, and the radiation heat dissipation film has a microscopic structure with crystal.

A radiation heat dissipation LED structure, comprising:

• a sapphire substrate having an upper surface and a lower surface;
• an LED epitaxy layer formed on the upper surface of the sapphire substrate, consisting of at least an N type semiconductor layer, a semiconductor light emitting layer and a P type semiconductor layer, which are sequentially stacked, wherein the semiconductor light emitting layer emits light when the LED epitaxy layer is forward biased;
• a first radiation heat dissipation film formed on the lower surface of the sapphire substrate;
• a base substrate;
• a second radiation heat dissipation film formed on the base substrate;
• a nano-enamel layer formed on the second radiation heat dissipation film;
• a thermally conductive binding layer provided between the first radiation heat dissipation film and the nano-enamel layer to bind the first radiation heat dissipation film and the nano-enamel layer;
• at least one electrical connection line electrically connecting the N type semiconductor layer and the P type semiconductor layer to a positive end and a negative end of an external power source, respectively;
• and
• a package body enclosing the LED epitaxy layer,
• wherein each of the first and second radiation heat dissipation films consists of a mixture of metal and nonmetal, which consists of at least one of silver, copper, tin, aluminum, titanium, iron and antimony, and one of oxide, nitride and inorganic acid of at least one of boron and carbon, and each of the first and second radiation heat dissipation films has a microscopic structure with crystal.