Light emitting device

A light emitting device which is configured comprising a semiconductor light emitting element and a phosphor layer, wherein

• (i) the semiconductor light emitting element emits light of a wavelength of 350 nm or more and 520 nm or less,
• (ii) the phosphor layer includes a phosphor which is capable of emitting light of a longer wavelength than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element,
• (iii) the phosphor layer has a thickness of two or more times and ten or less times a volume median diameter D50v of the phosphor, and
• (iv) a ratio (Dv/Dn) between a volumetric basis average particle diameter Dv and a number mean diameter Dn of the phosphor in the phosphor layer is 1.2 or more and 25 or less.

A light emitting device which is configured comprising a semiconductor light emitting element and a phosphor layer, wherein

• (i) the semiconductor light emitting element emits light of a wavelength of 350 nm or more and 520 nm or less,
• (ii) the phosphor layer includes a phosphor which is capable of emitting light of a longer wavelength than the light emitted by the semiconductor light emitting element, by being excited by the light emitted by the semiconductor light emitting element,
• (iii) a ratio (Dv/Dn) between a volumetric basis average particle diameter Dv and a number mean diameter Dn of the phosphor in the phosphor layer is 1.2 or more and 25 or less, and
• (iv) a difference between a maximum thickness and a minimum thickness of the phosphor layer is no more than a volume median diameter D50v of the phosphor layer.