Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a first electrode layer having a metal portion, a plurality of through-holes being provided in the metal portion, each of the through-holes having an opening having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers;
• a second electrode layer stacked with the first electrode layer along a stacked direction, the second electrode layer being light-reflective;
• a first semiconductor layer of a first conductivity type provided between the first electrode layer and the second electrode layer;
• a second semiconductor layer of a second conductivity type provided between the first semiconductor layer and the second electrode layer, the second conductivity type being different from the first conductivity type;
• a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
• and
• a first intermediate layer provided between the second semiconductor layer and the second electrode layer, the first intermediate layer being transmissive with respect to light emitted from the light emitting layer,
• the first intermediate layer including:
• a plurality of first contact portions to provide electrical contact having a first electrical resistance between the second electrode layer and the second semiconductor layer;
• and
• a first non-contact portion juxtaposed with the first contact portions in a first plane perpendicular to the stacking direction to provide a second electrical resistance between the second electrode layer and the second semiconductor layer, the second electrical resistance being higher than the first electrical resistance.