Method and System for Epitaxy Processes on Miscut Bulk Substrates
AssigneeSoraa, Inc.
InventorsArpan Chakraborty, Michael Grundmann, Anurag Tyagi
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Abstract
A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
Claims20
A method for fabricating a device, the method comprising:
- providing a gallium and nitrogen containing substrate having a surface region, the surface region being characterized by a c-plane, a miscut angle of at least 0.35 degrees from the c-plane toward the m-direction, and a projection of the surface normal coincides with the m-axis;
- forming a gallium and nitrogen containing thin film;
- and
- forming an electrical contact region overlying the thin film.
A device comprising (Al,Ga,In)N and a first surface characterized by a c-plane having a miscut angle of at least 0.35 degrees toward the m-direction.
A method for manufacturing an optical device from a bulk gallium and nitrogen containing substrate comprising:
- providing the bulk gallium and nitrogen containing substrate having a top surface, wherein at least one surface region on the top surface is a c-plane having a miscut angle of at least 0.35 degrees toward the m-direction;
- subjecting the at least one surface region to a treatment process to remove sub-surface damage, the treatment process comprising using a hydrogen and a nitrogen bearing species;
- forming a n-type gallium and nitrogen containing material overlying the at least one surface region;
- forming an active region comprising multiple thin film layers overlying the n-type gallium and nitrogen containing material, each of the thin film layers comprising an indium species, an aluminum species, and a gallium and nitrogen containing species;
- forming an aluminum, gallium, indium, gallium, and nitrogen containing electron blocking material overlying the active region;
- and
- forming a p-type gallium and nitrogen containing material overlying the electron blocking material to cause formation of a processed bulk gallium and nitrogen containing substrate;
- wherein the processed bulk gallium and nitrogen containing substrate is characterized by a PL wavelength standard deviation of less than or equal to 0.2%;
- and each of the thin film layers comprises a surface region characterized by a root mean square surface roughness of less than or equal to 1 nm over a surface area of at least 2,500 μm2.
Dependencies are inferred from the claim text.