Back to results
US 2013/0075757 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMariko Suzuki, Tadashi Sakai, Naoshi Sakuma, Masayuki Katagiri, Yuichi Yamazaki
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.
Claims7
A semiconductor device comprising:
- a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees;
- and
- an n-type diamond semiconductor layer formed above the surface plane, the layer containing phosphorous (P).
A method for manufacturing a semiconductor device, comprising:
- preparing a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees;
- and
- forming an n-type diamond semiconductor layer containing phosphorous (P) by epitaxial growth above the surface plane.
Dependencies are inferred from the claim text.