Semiconductor device and method for reduced bias threshold instability

A metal-oxide field-effect transistor (MOSFET) device, comprising:

• a gate electrode;
• a substrate comprising silicon carbide and having a surface that supports said gate electrode and defines a surface normal direction, said substrate including:
• a drift region including a first dopant type so as to have a first conductivity type;
• a well region adjacent to said drift region and proximal to said surface, said well region including a second dopant type so as to have a second conductivity type, said well region including a channel region disposed proximal to said gate electrode;
• and
• a source contact region adjacent to the well region, said source contact region having the first conductivity type;
• an inter-layer dielectric disposed about said gate electrode and on a portion of the surface of said substrate;
• a contact layer disposed on a portion of the surface of said substrate covering a portion of the source contact region;
• a remedial layer disposed over the inter-layer dielectric and in contact with a portion of said surface of the substrate, said remedial layer providing a continuous conformal coverage of the inter-layer dielectric;
• and
• a source electrode disposed over said remedial layer and in electrical contact with the source contact region.

A semiconductor device, comprising:

• a gate electrode;
• a substrate comprising silicon carbide and defining a major surface that supports the gate electrode and defines a surface normal direction;
• a gate insulation layer disposed on a portion of the major surface of the substrate between the substrate and the gate electrode;
• a dielectric layer disposed over the gate electrode and onto an adjacent portion of the major surface of the substrate;
• a contact layer disposed over a portion of the major surface of the substrate;
• a remedial layer disposed over the dielectric layer and onto a portion of the major surface of the substrate;
• and
• a second electrode extending over the remedial layer, wherein the second electrode is in electrical contact with the contact layer.