Compound semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorKenji IMANISHI
Life of this patent
Estimating the term…
Abstract
An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; a p-type semiconductor layer formed between the electron supply layer and the gate electrode; and a hole barrier layer formed between the electron supply layer and the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
Claims18
A compound semiconductor device comprising:
- a substrate;
- an electron channel layer and an electron supply layer formed over the substrate;
- a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer;
- a p-type semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a hole barrier layer formed between the electron supply layer and the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
A power supply apparatus comprising
- a compound semiconductor device, which comprises:
- a substrate;
- an electron channel layer and an electron supply layer formed over the substrate;
- a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer;
- a p-type semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a hole barrier layer formed between the electron supply layer and the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
An amplifier comprising
- a compound semiconductor device, which comprises:
- a substrate;
- an electron channel layer and an electron supply layer formed over the substrate;
- a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer;
- a p-type semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a hole barrier layer formed between the electron supply layer and the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
A method of manufacturing a compound semiconductor device, comprising:
- forming an electron channel layer and an electron supply layer over the substrate;
- forming a gate electrode, a source electrode and a drain electrode on or above the electron supply layer;
- forming a p-type semiconductor layer which is located between the electron supply layer and the gate electrode, before the forming the gate electrode;
- and
- forming a hole barrier layer which is located between the electron supply layer and the p-type semiconductor layer, before the forming the p-type semiconductor layer, a band gap of the hole barrier layer being larger than that of the electron supply layer.
Dependencies are inferred from the claim text.