P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof

The material according to the previous claims, characterized in that the percentage of metal species varies between 0.5% and 15%.

The material according to the previous claims, characterized in that it is in a state of amorphous, nanocrystalline, or polycrystalline structure, either stoichiometric or not.

The material according to the previous claims, characterized in that it has been deposited at a temperature below 250° C., notwithstanding a tolerance of 50° C.

The material according to the previous claims, characterized in that, once deposited, it is annealed at a temperature below 300° C., preferably at 250° C., notwithstanding a tolerance of 50° C.

The material according to the previous claims, characterized in that it is used as an insulator, additionally comprising oxygen incorporated in its structure, namely with an Opp larger than 9% in order to obtain an insulating film.

The material according to the previous claim, characterized in that it further comprises impurities or additives for controlling the electronic properties, whose properties comprise the number of free carriers as positive charges, whose impurities particularly comprise zirconium or nitrogen, up to 20% of the total composition.

The material according to the previous claims, characterized in that it is used as p-type semiconductor in order to obtain a metal-insulator-semiconductor, MIS, type diode, wherein the diode comprises a metal such as Nickel in one side of said diode, and has as an insulator the same material with incorporated oxygen concentrations larger than 45%, or another organic or inorganic material, such as mylar or hafnia.

The material according to the previous claims, characterized in that it is simultaneously used as ohmic contact and as active element of the junction in a semiconductor heterojunction.

The material according to the previous claim, characterized in that it is used as an heterojunction, wherein the n-type and p-type layers possess thicknesses in which the thicker oxide corresponds to the semiconductor with lower number of free carriers, and the thinner oxide possesses a thickness at least ten times lower than the previous one and possesses free carriers at least ten up to a hundred times higher than the thicker oxide.

The material according to the previous claims, characterized in that it is used as channel active layer in an individualized or multi-layered or integrated p-type field effect transistor.

The material according to the previous claims, characterized in that it is used as p-type semiconductor in a CMOS or C-MESFET device.

The material according to the previous claim, characterized in that it is used in the device as n-type semiconductor in which said inorganic covalent semiconductor may be formed with the n-doped silicon, or ionic inorganic semiconductors, such as GTZO or AZTO, or organic semiconductors, or any of the possible hybrid combinations thereof.

The material according to the previous claims, characterized in that the semiconductor device further comprises a matching layer with silicon dioxide, or silicon nitride, or tantalum pentoxide, or polymer films, such as SU8, or combinations thereof, with thicknesses between 0.5 nm and 1000 nm.

The material according to the previous claims, characterized in that the semiconductor device further comprises a surface encapsulation and/or passivation layer, by means of a polymer, such as SU8, or magnesium fluoride, or silicon oxide, or silicon nitride, or combinations thereof.

The material according to the previous claims, characterized in that the semiconductor device further comprises a rigid substrate, such as ceramics or glass, or a flexible substrate, such as mylar, polymer, or paper.

The material according to the previous claims, characterized in that the semiconductor device further comprises a natural, synthetic, or mixed cellulose dielectric, referred to as cellulosic or bioorganic or paper material.

The material according to the previous claim, characterized in that the semiconductor device comprises thin films of cellulosic materials comprised by natural, synthetic, or mixed cellulose operable in order to provide the physical support for the device and to act as dielectric (3) of said device, thereby rendering the device self-sustained.

The material according to the previous claims, characterized in that the semiconductor device comprises one or more of the elements referred to in the previous claims in gates or logical devices, oscillators, records, controllers, inverters, actuators or drivers, flash memories, solar cells, diodes, light emitting diodes, radio identification devices RFID, or active matrices for displays.

The material according to the previous claims, characterized in that it allows the use thereof in the manufacture of gates or logical devices, oscillators, records, controllers, inverters, actuators or drivers, flash memories, solar cells, diodes, light emitting diodes, radio identification devices RFID, or active matrices for displays.

The process for the manufacture of material according to the previous claim, characterized in that it comprises the deposition step of the material up to 250° C.

The process for the manufacture of material according to the two previous claims, characterized in that it comprises the annealing step of the material up to 300° C.

The process for the manufacture of material according to the previous claim, characterized in that it comprises a physical, or physical-chemical, or chemical process, either using a vacuum or not, such as thermal evaporation, DC or RF sputtering, ink-jet printing, pulsed laser deposition, in order to fabricate films of amorphous, or nanocrystalline, or polycrystalline structure, with controlled composition, using growth rates between 0.01 nms-1-20 nms−1;

• process pressures between 105 Pa and 10-6 Pa;
• under atmospheres preferably containing argon, using partial pressures that vary between 10 Pa and 10-5 Pa, with or without oxygen and/or nitrogen, and/or fluorine, wherein the content of these additional gases may vary between 0.00-0.99 of the argon content, as a function of the energy process, preferably between 0.1 Wcm−2-20 Wcm−2, and of the distance between the source containing the material to be deposited and the substrate (1), preferably between 2 cm and 50 cm, and of the atmosphere being used, preferably containing argon.