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US 2013/0075739 A1Published application
Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
AssigneesArizona State University, Arizona Board of Regents, a body corporate of the State of Arizona, acting for and on behalf of
InventorsDouglas E. Loy, David Morton, Emmett Howard
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Abstract
Some embodiments include a method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof. Other embodiments of related methods and structures are also disclosed.
Claims20
1) A method of manufacturing, the method comprising:
- providing a carrier substrate having a first side and a second side, a first substrate bonded to the first side of the carrier substrate, and a second substrate bonded to the second side of the carrier substrate;
- depositing at least one layer of a first material over the first substrate while the first substrate is bonded to the first side of the carrier substrate to create a portion of at least one first electronic device;
- and
- depositing at least one layer of a second material over the second substrate while the second substrate is bonded to the second side of the carrier substrate to create a portion of at least one second electronic device;
- wherein:
- at least one of the first substrate or the second substrate comprises a flexible substrate.
3 more elements
12) A method comprising:
- providing a carrier substrate having a first side and a second side, wherein:
- a first substrate is bonded to the first side of the carrier substrate, and
- at least a portion of an electronic device is located at the second side of the carrier substrate;
- depositing a first gate metal layer over the first substrate while the first substrate is bonded to the first side of the carrier substrate;
- depositing a first silicon comprising layer over the first gate metal layer while the first substrate is bonded to the first side of the carrier substrate;
- forming a first contact element over the first silicon comprising layer while the first substrate is bonded to the first side of the carrier substrate, wherein the first contact element comprises a first diffusion barrier;
- depositing a first dielectric material over the first contact element while the first substrate is bonded to the first side of the carrier substrate, wherein the first dielectric material comprises an organic siloxane-based dielectric material;
- depositing a second dielectric material over the first dielectric material while the first substrate is bonded to the first side of the carrier substrate, wherein the second dielectric material comprises a silicon nitride material;
- and
- baking the second dielectric material, the first dielectric material, the first contact element, the first silicon comprising layer, the first gate metal layer, the first substrate, the carrier substrate while the first substrate is bonded to the first side of the carrier substrate;
- wherein:
- the first substrate comprises a first flexible substrate;
- and
- the at least the portion of the electronic device comprises the first gate metal layer.
11 more elements
14) An electrical device structure comprising:
- a carrier substrate having a first side and a second side;
- a first electronic device located at the first side of the carrier substrate, the first electronic device comprising:
- a first flexible substrate located at the first side of the carrier substrate;
- a first metal gate layer over the first flexible substrate;
- a first amorphous silicon layer over the first metal gate layer;
- a first N+ amorphous silicon layer over the first amorphous silicon layer;
- a first diffusion barrier;
- and
- a first metal layer;
- and
- a second electronic device located at the second side of the carrier substrate;
- wherein:
- the first diffusion barrier is positioned between the first metal layer and the first N+ amorphous silicon layer.
10 more elements
Dependencies are inferred from the claim text.