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AssigneesCambridge Enterprise Limited, Plastic Logic Limited
InventorsPaul A. Cain, Yong-Young Noh, Henning Sirringhaus
Estimating the term…
An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.
A method of producing an electronic device, the device comprising an optically transparent substrate, a pre-defined first electrode structure incorporating an optically transparent channel, at least one intermediate layer and a photosensitive dielectric layer disposed above the at least one intermediate layer, the method comprising patterning a trench structure in a region of the photosensitive dielectric layer over the channel by backside light exposure through said optically transparent substrate using the pre-defined first electrode structure as a mask and subsequent removal of at least part of the photosensitive dielectric layer from such exposed regions such that when a further electrode is formed at least partially within the trench, the photosensitive dielectric layer ensures that any portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.
A method according to claim 5 when dependent on claim 43 wherein the semiconductor layer comprises an organic semiconductor, such as, polyarylamine, polyfluorene, polythiophene-based semiconducting polymers or a small molecule semiconductors such as pentacene or rubrene;
A method according to claim 5 when dependent on claim 43 wherein the semiconductor layer, first dielectric layer and/or photosensitive dielectric layer are formed by printing, inkjet printing, soft lithographic printing, screen printing, offset printing, blade coating, dip coating, spin coating, curtain coating, meniscus coating, spray coating, extrusion coating, or the layer(s) are deposited as a thin continuous film and patterned subtractively by techniques such as photolithography or laser ablation.
Dependencies are inferred from the claim text.