Vertical pnp device in a silicon-germanium bicmos process and manufacturing method thereof

A vertical PNP device in a silicon-germanium BiCMOS process, formed on a silicon substrate with an active area isolated by shallow trench field oxide regions, the vertical PNP device being formed in a deep N-well and being surrounded by the deep N-well, the vertical PNP device comprising a collector region, a base region and an emitter region, wherein

• the collector region comprises a first P-type ion implantation region and a second P-type ion implantation region formed in the active area in an upper part of the deep N-well;
• the first P-type ion implantation region has a depth greater than those of the shallow trench field oxide regions;
• the first P-type ion implantation region laterally diffuses into the silicon substrate at bottom of the shallow trench field oxide regions on both sides of the active area;
• the first P-type ion implantation region is in contact with the deep N-well;
• the second P-type ion implantation region has a depth less than those of the shallow trench field oxide regions;
• the second P-type ion implantation region is formed on top of the first P-type ion implantation region and is in contact with the first P-type ion implantation region;
• the second P-type ion implantation region has a doping concentration higher than that of the first P-type ion implantation region, and the first P-type ion implantation region has a doping concentration lower than that of the deep N-well.