Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same

A thin film transistor comprising:

• a gate electrode;
• a source electrode;
• a drain electrode disposed opposite to the source electrode;
• an oxide semiconductor disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode;
• and
• a gate insulating layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode,
• wherein the oxide semiconductor comprises:
• a first material comprising at least one selected from the group consisting of zinc (Zn) and tin (Sn);
• and
• a second material, and
• wherein a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from an electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

A thin film transistor array panel comprising:

• a substrate;
• a gate line disposed on the substrate and including a gate electrode;
• a gate insulating layer disposed on the gate line;
• an oxide semiconductor disposed on the gate insulating layer;
• a data line disposed on the oxide semiconductor and connected to a source electrode;
• a drain electrode disposed opposite to the source electrode on the oxide semiconductor;
• and
• a passivation layer disposed on the data line,
• wherein the oxide semiconductor comprises:
• a first material comprising at least one selected from the group consisting of zinc (Zn) and tin (Sn):
• and
• a second material, and
• wherein a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from an electronegativity difference value between the first material and oxygen (O) is less than about 1.3.