Tunable Hot-Electron Transfer Within a Nanostructure
AssigneeDrexel University
InventorsJonathan E. Spanier, Guannan Chen, Eric M. Gallo, Baris Taskin
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Abstract
Provided are multimaterial devices, such as coaxial nanowires, that effect hot photoexcited electron transfer across the interface of the materials. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, may be effected by modulating electrostatic gating, incident photon energy, and the incident photon intensity. Dynamic manipulation of this transfer rate permits the introduction and control of an adjustable phase delay within a device element.
Claims24
An electronic device, comprising:
- a semiconductor structure supported by a substrate,
- the semiconductor structure comprising a first material and a second material contacting one another, the first and second materials being arranged in a non-planar configuration,
- the second material having a valence bandgap, conduction bandgap, or both that are broader than the corresponding band of the first material,
- the structure being in electronic communication with a source electrode and a drain electrode;
- and
- a source of illumination in optical communication with the structure, a source of electrostatic potential in electronic communication with the structure, or both.
A method of operating a device, comprising:
- exposing, to light, to an electrostatic field, or to both,
- a semiconductor structure comprising a first material and a second material contacting one another, the first and second materials being arranged in a non-planar configuration,
- the second material having a valence bandgap, conduction bandgap, or both that are broader than the corresponding band of the first material,
- the structure being in electronic communication with a source electrode and a drain electrode,
- the exposing being modulated so as to alter an electronic characteristic of the semiconductor structure.
A solar collection device, comprising:
- a semiconductor structure supported by a substrate,
- the semiconductor structure comprising a first material and a second material contacting one another, the first and second materials being arranged in a non-planar configuration,
- the second material having a valence bandgap, conduction bandgap, or both that are broader than the corresponding band of the first material;
- and
- a conductor in electronic communication with the semiconductor structure.
Dependencies are inferred from the claim text.