Programmable array of silicon nanowire field effect transistor and method for fabricating the same

A hexagonal programmable array based on a silicon nanowire field effect transistor, characterized in that, the hexagonal programmable array includes a nanowire device, a nanowire device connection region and a gate connection region;

• the nanowire device has a cylinder shape and includes a silicon nanowire channel, a gate dielectric layer and a gate region, the silicon nanowire channel being surrounded by the gate dielectric layer, and the gate dielectric layer being surrounded by the gate region, wherein, the silicon nanowire channel, the gate dielectric layer and the gate region have an identical length, which is in a range of 5 nm-1 μm;
• the nanowire devices are arranged in a hexagon shape to form programming units, a common nanowire device is shared by adjacent programming units, and a central portion of each of the programming units is a hollow region;
• the nanowire device connection region is a connection node of three nanowire devices, and is connected to the channel of the nanowire device while being used as a source or a drain of the nanowire device;
• the nanowire device connection region is secured to a silicon supporter;
• and a connection for the gate region of the nanowire device is provided by the gate connection region, so that a plurality of nanowire devices form a gate-sharing structure.