Electrode Structure Including Graphene And Field Effect Transistor Having The Same

A field effect transistor (FET) comprising:

• a semiconductor substrate doped with a first impurity,
• the semiconductor substrate including a source region and a drain region doped with a second impurity,
• the second impurity having an opposite polarity to a polarity of the first impurity;
• a first graphene layer and a second graphene layer on the semiconductor substrate and spaced apart from each other,
• the first graphene layer on the source region and the second graphene layer on the drain region of the substrate;
• a source electrode containing metal and a drain electrode containing metal that are respectively on the first graphene layer and the second graphene layer,
• the first graphene layer contacting at least one of the substrate and the source electrode,
• the second graphene layer contacting at least one of the substrate and the drain electrode;
• a gate insulating layer between the source electrode and the drain electrode on the semiconductor layer;
• and
• a gate electrode on the gate insulating layer.