Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
AssigneeTechnion Research & Development Foundation Limited
InventorsAsaf ALBO, Gad Bahir, Dan Fekete
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Abstract
Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.
Claims20
A quantum well structure comprising a base-layer, a well-layer which comprises a group-III element selected from the group consisting of In and Ga, a group-V element selected from the group consisting of N, P, As and Sb, and a cap layer, wherein a thickness of said well-layer ranges from 5 Å to 7 Å and a number of atoms of said group-III element is at least 50 percents of the total number of atoms of said well-layer.
Dependencies are inferred from the claim text.