Coalesced nanowire structures with interstitial voids and method for manufacturing the same
AssigneeGlo AB
InventorsPatrik SVENSSON, Linda ROMANO, Sungsoo YI, Olga KRYLIOUK, Ying-Lan CHANG
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Abstract
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.
Claims46
A semiconductor device, comprising:
- a plurality of first conductivity type semiconductor nanowire cores located over a support;
- a continuous second conductivity type semiconductor layer extending over and around the cores;
- a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores;
- and
- a first electrode layer that contacts the second conductivity type semiconductor layer.
A method of making a semiconductor device, comprising:
- epitaxially growing plurality of first conductivity type semiconductor nanowire cores from portions of a semiconductor surface of a support exposed through openings in an insulating mask layer on the support;
- forming semiconductor active region shells on the cores;
- growing a continuous second conductivity type semiconductor layer extending over and around the cores and the shells, such that a plurality of interstitial voids are formed in the second conductivity type semiconductor layer extending between the cores during the step of growing;
- and
- forming a first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
A method of making a semiconductor device, comprising:
- epitaxially growing plurality of first conductivity type semiconductor nanowire cores from portions of a semiconductor surface of a support exposed through openings in an insulating mask layer on the support;
- forming semiconductor active region shells on the cores;
- epitaxially growing a first continuous layer of second conductivity type semiconductor extending over and around the cores and the shells;
- epitaxially growing a second continuous layer of the second conductivity type semiconductor, wherein the second continuous layer of the second conductivity type semiconductor is grown over the first continuous layer of second conductivity type semiconductor and comprises a plurality of voids interposing the cores;
- and
- forming a first electrode layer that contacts the second layer of the second conductivity type.
Dependencies are inferred from the claim text.