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US 2013/0075691 A1Published application
Deep Ultraviolet Light Emitting Diode
AssigneeSensor Electronic Technology, Inc.
InventorsMichael Shur, Remigijus Gaska, Jinwei Yang
Life of this patent
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Abstract
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.
Claims20
A heterostructure comprising:
- a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein at least one of:
- the plurality of quantum wells or the plurality of barriers includes a percolated carbon atomic plane.
A light emitting device comprising:
- a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein at least one of:
- the plurality of quantum wells or the plurality of barriers includes a percolated carbon atomic plane.
A method comprising:
- fabricating a heterostructure, the fabricating including forming a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the forming includes incorporating a percolated carbon atomic plane in at least one of:
- the plurality of quantum wells or the plurality of barriers.
Dependencies are inferred from the claim text.