Semiconductor Memory Device and Manufacturing Method Thereof
AssigneeSemiconductor Manufacturing International Corp.
InventorsJia XU, GuanPing WU, Chao ZHANG, Daisy LIU
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Abstract
A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
Claims20
A semiconductor memory device, comprising:
- a first insulating portion;
- a phase-change material element that contacts the first insulating portion;
- a first electrode that contacts a first side surface of the phase-change material element, the first side surface of the phase-change material element being not parallel to a top surface of the first electrode;
- and
- a second insulating portion surrounding the phase-change material element.
A method for manufacturing a semiconductor memory device, the method comprising:
- providing a first insulating portion;
- forming an electrode layer that overlaps the first insulating portion;
- patterning the electrode layer to reduce a width of the electrode layer;
- forming a second insulating portion;
- forming an opening that penetrates through the second insulating portion and the electrode layer to form at least a first electrode;
- and
- forming a phase-change material element in the opening,
- wherein the first electrode contacts a first side surface of the phase-change material element, the first side surface of the phase-change material being not parallel to a top surface of the first electrode.
Dependencies are inferred from the claim text.