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US 2013/0075686 A1Published application
Variable resistance memory
AssigneeKabushiki Kaisha Toshiba
InventorHirohisa Kawasaki
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Abstract
A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the ion source electrode.
Claims17
A variable resistance memory comprising
- a memory cell including:
- an ion source electrode including metal atoms;
- an opposite electrode;
- an amorphous silicon film formed between the ion source electrode and the opposite electrode;
- and
- a polysilicon film formed between the amorphous silicon film and the ion source electrode.
3 more elements
Dependencies are inferred from the claim text.