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US 2013/0075685 A1Published application
Methods and apparatus for including an air gap in carbon-based memory devices
OwnerYubao Li, Chu-Chen Fuinventors
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Abstract
In some aspects, a reversible resistance-switching metal-insulator-metal stack is provided that includes a first conducting layer, a carbon nano-tube (“CNT”) material above the first conducting layer, a second conducting layer above the CNT material, and an air gap between the first conducting layer and the CNT material. Numerous other aspects are provided.
Claims30
A reversible resistance-switching metal-insulator-metal (“MIM”) stack comprising:
- a first conducting layer;
- a carbon nano-tube (“CNT”) material above the first conducting layer;
- a second conducting layer above the CNT material;
- and
- an air gap between the first conducting layer and the CNT material.
2 more elements
A carbon nano-tube (“CNT”) memory cell comprising:
- a first conductor;
- a steering element above the first conductor;
- a first conducting layer above the first conductor;
- a CNT material above the first conducting layer;
- a second conducting layer above the CNT material;
- and
- an air gap between the first conducting layer and the CNT material.
4 more elements
A method of forming a carbon nano-tube (“CNT”) memory cell, the method comprising:
- forming a first conductor;
- forming a steering element above the first conductor;
- forming a first conducting layer above the first conductor;
- forming a CNT material above the first conducting layer;
- forming a second conducting layer above the CNT material;
- and
- forming an air gap between the first conducting layer and the CNT material.
4 more elements
Dependencies are inferred from the claim text.