Non-volatile memory device

A non-volatile memory device comprising:

• a substrate;
• a first line extending in a first direction, the first direction being parallel to a main surface of the substrate;
• a stack comprising N+1 layers (where N≧1) of first insulator films and N layers of first semiconductor layers, the first insulator films and the first semiconductor layers being alternately stacked above the first line, side surfaces of the first insulator films, which form a portion of a side surface of the stack, being formed so as to be one step recessed relative to side surfaces of the first semiconductor layers;
• a second line formed above the stack and extending in a second direction, the second direction being parallel to the main surface of the substrate and orthogonal to the first direction;
• a select element provided at a point where the first line and the second line intersect;
• a second insulator film provided along the side surface of the stack;
• a channel layer provided along the second insulator film;
• an adhesion layer provided only at the same height ranges as the side surfaces of the first insulator films with respect to a direction in which the channel layer extends;
• and
• a variable resistance material layer provided along side surfaces of the channel layer and the adhesion layer, wherein
• the first line and the second line are electrically connected with each other via the select element and the channel layer, and
• a contact resistance via the adhesion layer between the channel layer and the variable resistance material layer is low, and a resistance of the adhesion layer in the direction in which the channel layer extends is high.