Phase change random access memory and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorKeun LEE
Life of this patent
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Abstract
A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.
Claims27
A phase change random access memory comprising:
- a semiconductor substrate having a bottom electrode formed over the semiconductor substrate;
- and
- a phase change layer formed over the bottom electrode, wherein the phase change layer includes
- a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element;
- and
- a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.
A phase change random access memory comprising:
- a semiconductor substrate having a bottom electrode formed over the semiconductor substrate;
- and
- a phase change layer formed over the bottom electrode, wherein the phase change layer includes
- a first phase change layer formed over the bottom electrode and including any one of a binary compound of a first element and a second element, a binary compound of the first element and a third element, and a binary compound of the second element and the third element;
- and
- a second phase change layer formed over a surface of the first phase change layer and including a binary compound of the first element and the second element or a binary compound of the first element and the third element, wherein the ratio of the first element in the second phase change layer is such that an area of the first phase change layer is prevented from increasing through diffusion.
A phase change random access memory comprising:
- a semiconductor substrate having a bottom electrode formed over the semiconductor substrate;
- and
- a phase change layer formed over the bottom electrode, wherein the phase change layer includes
- a first phase change layer formed over the bottom electrode and including a ternary compound of a first element, a second element and a third element;
- and
- a second phase change layer formed over a surface of the first phase change layer and formed of a ternary compound of the first element, the second element and the third element, wherein the ratio of the first element is such that an area of the first phase change layer is prevented from increasing through diffusion.
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using at least one of a first element, a second element, and a third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using the first element.
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using any one of a binary compound of a first element and a second element, a binary compound of the first element and a third element, and a binary compound of the second element and the third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using a binary compound of the first element and the second element or a binary compound of the first element and the third element.
A method for manufacturing a phase change random access memory, comprising:
- forming a bottom electrode over a semiconductor substrate;
- forming a first phase change layer over the bottom electrode using a ternary compound of a first element, a second element and a third element;
- and
- forming a second phase change layer over a surface of the first phase change layer using a ternary compound of the first element, the second element and the third element.
Dependencies are inferred from the claim text.