Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials
AssigneeHemlock Semiconductor Corporation
InventorsDoug Kreszowski, John W. Hadd
Life of this patent
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Abstract
Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.
Claims21
-36. (canceled)
A photoluminescence spectroscopy system for identifying and quantifying impurities in one or more semiconductor samples, each comprising a first surface, a substantially orthogonal second surface, and an edge at the intersection of the first and second surfaces adapted to allow collection of photoluminescence emitted therefrom, the photoluminescence spectroscopy system comprising:
- a laser system adapted to provide a defocused laser beam capable of causing an illuminated semiconductor to photoluminesce;
- and
- a collection lens having a lens focal point at the edge of the one or more semiconductor samples positioned for analysis, the lens adapted to collect emitted photoluminescence from said focal point;
- wherein the system is configured such that when the one or more semiconductor samples is positioned for analysis, its first surface is oriented to be at an angle of deviation of greater than 0° and less than or equal to 90° with respect to a position parallel to the collection lens, and
- wherein the first surface is adapted to be at least partially illuminated by the defocused laser beam.
A photoluminescence spectroscopy method for identifying and quantifying impurities in a semiconductor sample, comprising:
- directing a defocused laser beam onto at least a portion of a substantially planar first surface of a semiconductor sample positioned for analysis, the sample comprising a substantially orthogonal second surface, and an edge at the intersection of the first and second surfaces adapted to allow collection of photoluminescence emitted therefrom;
- generating collectable photoluminescence in the sample;
- collecting the photoluminescence from the edge of the sample using a collection lens, the lens adapted to collect emitted photoluminescence from a lens focal point at the edge;
- and
- generating data from the collected photoluminescence, the data corresponding to sample impurity identity, sample impurity quantity, or both;
- wherein when the sample is positioned for analysis, its first surface is oriented to be at an angle of deviation of greater than 0° and less than or equal to 90° with respect to a position parallel to the collection lens.
Dependencies are inferred from the claim text.