Multi-ion beam implantation apparatus and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNai-Han CHENG, Chin-Hsiang LIN, Chi-Ming YANG, Chun-Lin CHANG, Chih-Hong HWANG
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Abstract
An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
Claims20
An apparatus comprising:
- a first charged particle beam source;
- a second charged particle beam source;
- an charged particle beam analyzer configured to analyze a first charged particle beam received from the first charged particle beam source and a second charged particle beam received from the second charged particle beam source, such that the charged particle beam analyzer emits a first analyzed charged particle beam and a second analyzed charged particle beam;
- and
- a multi-charged particle beam angle incidence control system disposed between the charged particle beam analyzer and a wafer, the multi-charged particle beam angle incidence control system configured to direct the first analyzed charged particle beam and the second analyzed charged particle beam to the wafer.
An apparatus comprising:
- an ion beam source that emits at least two ion beams;
- an ion beam analyzer;
- and
- a multi-ion beam angle incidence control system, wherein the ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.
The apparatus of 11 wherein the ion beam source includes a first ion beam source that emits a first ion beam and a second ion beam source that emits a second ion beam.
A method comprising:
- generating a first ion beam;
- generating a second ion beam;
- and
- directing the first ion beam and the second ion beam to a wafer, such that the first ion beam and the second ion beam simultaneously strike the wafer, the first ion beam striking the wafer at a first angle of incidence and the second ion beam striking the wafer at a second angle of incidence.
Dependencies are inferred from the claim text.