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US 2013/0075366 A1Published application
Surface profile adjustment using gas cluster ion beam processing
AssigneeTEL Epion Inc.
InventorJohn J. Hautala
Life of this patent
Estimating the term…
Abstract
A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.
Claims17
A method of performing corrective processing of a surface on a workpiece, comprising:
- preparing correction data for a workpiece, said correction data being computed from metrology data that is related to a surface profile of a surface on said workpiece;
- adjusting said surface profile at one or more regions of said surface on said workpiece using a gas cluster ion beam (GCIB) to create a new surface profile, wherein an amount of said adjusting on said one or more regions of said surface by said GCIB is determined according to said correction data;
- and
- further adjusting said new surface profile of said surface on said workpiece by performing an etching process following said adjusting by said GCIB, wherein said etching process comprises etching a first region on said workpiece at a first etch rate, and etching a second region on said workpiece at a second etch rate.
1 more element
A method of performing corrective processing on a workpiece, comprising:
- acquiring metrology data related to a surface profile of a surface on a workpiece;
- computing correction data for said workpiece using said metrology data;
- applying said correction data to said workpiece using a gas cluster ion beam (GCIB) to adjust said surface profile on one or more regions of said surface on said workpiece;
- and
- performing an etching process to further adjust said surface profile on said one or more regions of at least a portion of said surface on said workpiece, wherein said etching process comprises etching a first region on said workpiece at a first etch rate, and etching a second region on said workpiece at a second etch rate.
2 more elements
A processing system for performing corrective processing of a surface on a workpiece, comprising:
- a metrology system configured to acquire metrology data for a workpiece;
- a multi-process control system configured to compute correction data for said workpiece using said metrology data;
- a gas cluster ion beam (GCIB) processing system configured to apply said correction data to said workpiece to adjust a surface profile on one or more regions of a surface on said workpiece;
- an etching system configured to further adjust said surface profile of said surface of said workpiece by performing an etching, wherein said etching process comprises etching a first region on said workpiece at a first etch rate, and etching a second region on said workpiece at a second etch rate;
- and
- a workpiece handling system coupled to said GCIB processing system, and said etching system, and configured to transport said workpiece to and from said GCIB processing system and said etching system according to instructions from said multi-process control system.
3 more elements
Dependencies are inferred from the claim text.