Methods of Forming Through-Substrate Vias
AssigneeMicron Technology, Inc.
InventorLuke G. England
Life of this patent
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Abstract
A method of forming through-substrate vias includes separately electrodepositing copper and at least one element other than copper to fill remaining volume of through-substrate via openings formed within a substrate. The electrodeposited copper and the at least one other element are annealed to form an alloy of the copper and the at least one other element which is used in forming conductive through-substrate via structures that include the alloy.
Claims35
A method of forming through-substrate vias, comprising:
- separately electrodepositing copper and at least one element other than copper to fill remaining volume of through-substrate via openings formed within a substrate;
- and
- annealing the electrodeposited copper and the at least one other element to form an alloy of the copper and the at least one other element, and forming conductive through-substrate via structures comprising the alloy.
A method of forming through-substrate vias, comprising:
- forming through-substrate via openings partially through a substrate from a first side of the substrate;
- lining sidewalls of the through-substrate via openings with dielectric;
- lining conductive seed material laterally over the dielectric within the through-substrate via openings;
- separately electrodepositing copper and at least one element other than copper to fill remaining volume of the through-substrate via openings;
- annealing the electrodeposited copper and the at least one other element to form an alloy of the copper and the at least one other element;
- and
- after the annealing, removing substrate material from a second side of the substrate opposite the first side to expose and project conductive through-substrate via structures comprising the alloy from the second side of the substrate.
A method of forming through-substrate vias, comprising:
- electrodepositing one of copper or one element other than copper to form a metal lining within respective through-substrate via openings formed within a substrate, the metal lining forming an outwardly open void within the respective through-substrate via openings;
- electrodepositing the other of the copper or one element to fill the voids;
- and
- annealing the electrodeposited copper and one element to form an alloy of the copper and one element, and forming conductive through-substrate via structures comprising the alloy.
A method of forming through-substrate vias, comprising:
- electrodepositing one of copper or an element other than copper to form a first metal lining within respective through-substrate via openings formed within a substrate, the first metal lining being formed laterally inward of and directly against a conductive seed material formed over sidewalls of the respective through-substrate via openings, the first metal lining forming an outwardly open first void within the respective through-substrate via openings;
- electrodepositing the other of the copper or other element to form a second metal lining within the respective through-substrate via openings, the second metal lining being formed laterally inward of and directly against the first metal lining, the second metal lining forming an outwardly open second void within the respective through-substrate via openings;
- filling the second voids with electrodeposited metal;
- and
- annealing the substrate to form an alloy containing at least copper and the other element, and forming conductive through-substrate via structures comprising the alloy.
Dependencies are inferred from the claim text.