Titanium diboride coating for plasma processing apparatus
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsKamal Hadidi, George D. Papasouliotis, Craig R. Chaney
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsKamal Hadidi, George D. Papasouliotis, Craig R. Chaney
Estimating the term…
An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter.
A plasma processing chamber for processing a workpiece, comprising:
A plasma processing chamber for processing a workpiece comprising:
A ion source for use within a beam line ion implanter comprising:
Dependencies are inferred from the claim text.