Methods of forming a metal containing layer on a substrate with high uniformity and good profile control
AssigneeApplied Materials, Inc.
InventorsZhenbin Ge, Alan Ritchie, Adolph Miller Allen
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Abstract
Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.
Claims20
A method of sputter depositing a metal containing layer on the substrate, comprising:
- transferring a substrate in a processing chamber;
- supplying a gas mixture including at least Ne gas into the processing chamber;
- applying a RF power to form a plasma from the gas mixture to sputter source material from a target disposed in the processing chamber;
- and
- depositing a metal containing layer onto the substrate from the sputtered source material.
A method of sputter depositing a metal containing layer on the substrate, comprising:
- transferring a substrate in a processing chamber;
- supplying a gas mixture including at least Ne gas into the processing chamber;
- controlling a partial pressure of a Ne gas supplied in the gas mixture at greater than about 50 percent;
- applying a RF power in the gas mixture to form a plasma from the gas mixture;
- and
- depositing a metal containing layer onto the substrate in the presence of the plasma.
Dependencies are inferred from the claim text.