Film deposition apparatus and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorManabu HONMA
Life of this patent
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Abstract
A film deposition apparatus includes processing areas spaced part from each other in a circumferential direction and at least one separation gas nozzle arranged between the process areas, and separates the process areas from each other by supplying a separation gas from the separation gas nozzle. Moreover, a first ceiling surface is provided on the downstream side in a rotational direction of the turntable relative to the separation gas nozzle to form a narrow space between an upper surface of the turntable and a lower surface of the first ceiling surface. Furthermore, a second ceiling surface higher than the first ceiling surface is provided on the upstream side in the rotational direction of the turntable.
Claims8
A film deposition apparatus configured to form a thin film on a wafer by repeating a cycle of supplying plural kinds of process gases in turn in a vacuum chamber, the film deposition apparatus comprising:
- a turntable having a substrate mounting area in an upper surface to hold a substrate thereon in a circumferential direction, the turntable being configured to make the substrate mounting area revolve in the vacuum chamber;
- a plurality of process gas supplying parts configured to supply process gases different from each other to process areas spaced apart from each other in the circumferential direction of the turntable;
- and
- at least one separation part including a separation gas nozzle arranged to extend from a center side to an outer circumference side of the turntable to supply a separation gas to a separating area formed between the process areas for separating atmospheres of the respective process areas;
- and
- at least one evacuation opening configured to evacuate an atmosphere in the vacuum chamber, the evacuation opening being provided at an outer edge side of the turntable,
- wherein the separation part includes a first ceiling surface provided on the downstream side in the rotational direction of the turntable relative to the separation gas nozzle, the first ceiling surface being configured to form a narrow space between a lower surface thereof and the upper surface of the turntable from the center side to the outer circumference side of the turntable, and
- a second ceiling surface provided on the upstream side in the rotational direction of the turntable relative to the separation gas nozzle, the second ceiling surface being configured to be higher than the first ceiling surface from the center side to the outer circumference side, and
- wherein the evacuation opening is in communication with a gas retention space to form an area between the second ceiling surface and the turntable.
A substrate processing apparatus configured to perform a process on a wafer by repeating a cycle of supplying plural kinds of process gases in turn in a vacuum chamber, the substrate processing apparatus comprising:
- a turntable having a substrate mounting area in an upper surface to hold a substrate thereon in a circumferential direction, the turntable being configured to make the substrate mounting area revolve in the vacuum chamber;
- a plurality of process gas supplying parts configured to supply process gases different from each other to process areas spaced apart from each other in the circumferential direction of the turntable;
- and
- at least one separation part including a separation gas nozzle arranged to extend from a center side to an outer circumference side of the turntable to supply a separation gas to a separating area formed between the process areas for separating atmospheres of the respective process areas;
- and
- at least one evacuation opening configured to evacuate an atmosphere in the vacuum chamber, the evacuation opening being provided at an outer edge side of the turntable,
- wherein the separation part includes a first ceiling surface provided on the downstream side in the rotational direction of the turntable relative to the separation gas nozzle, the first ceiling being configured to form a narrow space between a lower surface thereof and the upper surface of the turntable from the center side to the outer circumference side of the turntable, and
- a second ceiling surface provided on the upstream side in the rotational direction of the turntable relative to the separation gas nozzle, the second ceiling surface being configured to be higher than the first ceiling surface from the center side to the outer circumference side, and
- wherein the evacuation opening is in communication with a gas retention space to be an area between the second ceiling surface and the turntable.
Dependencies are inferred from the claim text.