US 2013/0074769 A1 · APPARATUS FOR THE DEPOSITION OF A CONFORMAL FILM ON A SUBSTRATE AND METHODS THEREFOR

Abstract

A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.

Claims20

Dependent claims

An apparatus for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, said substrate being disposed on a chuck, said chuck being coupled to a cooling apparatus, comprising:

means of flowing a first gas mixture into said plasma processing chamber at a first pressure, wherein said first gas mixture includes at least carbon, and wherein said first gas mixture has a condensation temperature;
means of cooling said chuck below said condensation temperature using said cooling apparatus thereby allowing at least some of said first gas mixture to condense on a surface of said substrate;
means of venting said first gas mixture from said processing chamber;
means of flowing a second gas mixture into said plasma processing chamber, said second gas mixture being different in composition from said first gas mixture;
and
means of striking a plasma to form said conformal film.

3 more elements

An apparatus for depositing a conformal film on a substrate, the apparatus comprising:

a plasma processing chamber;
a chuck configured to mount a substrate thereon;
a gas venting system for:
introducing a first gas composition and a second gas composition into the chamber wherein the first gas composition and the second gas composition comprise different gas compositions, wherein the first gas composition attains a first pressure, and
evacuating at least one of the first gas and the second gas out of the chamber;
a cooling apparatus coupled with the chuck, the cooling apparatus configured to enable cooling of the chuck such that the substrate cools to below a condensation temperature of the first gas composition such that at least some of the first gas composition condenses on the substrate;
and
a plasma generator suitably arranged to strike a plasma within the plasma processing chamber.

5 more elements

Dependencies are inferred from the claim text.

Apparatus for the deposition of a conformal film on a substrate and methods therefor

Life of this patent

Apparatus for the deposition of a conformal film on a substrate and methods therefor

Life of this patent

Abstract

Claims20