Carbon nanotube crossbar based nano-architecture
AssigneeBoard of Regents, The University of Texas System
InventorBao Liu
Life of this patent
Estimating the term…
Abstract
Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next generation VLSI circuits. A CNT crossbar based nano-architecture, includes layers of orthogonal carbon nanotubes with electrically bistable and charge holding molecules at each crossing, forming a dense array of reconfigurable double gate carbon nanotube field effect transistors (RDG-CNFETs) and programmable interconnects, which is addressed via a voltage controlled nanotube addressing circuits on the boundaries.
Claims12
A double gate carbon nanotube field effect transistor, comprising:
- a first carbon nanotube (CNT) positioned as the front gate of the double gate carbon nanotube field effect transistor;
- a second doped CNT orthogonal to the first CNT, wherein the second CNT is the source, the drain, and the channel of the double gate carbon nanotube field effect transistor;
- and
- a third CNT positioned as the back gate, wherein the third CNT has the same orientation as the first CNT;
- wherein the double gate carbon nanotube field effect transistor is reconfigurable to be open, short, FET, or via.
A voltage controlled nanoscale wire addressing circuit comprising:
- a plurality of data lines;
- two address lines which are orthogonal to the data lines, wherein each address-line-data-line crossing comprises a field effect transistor, with the address line forming the gate of the field effect transistor, the data line forming the channel of the field effect transistor;
- wherein each address line forms a voltage scale under an external voltage;
- and
- wherein the external voltages applied to the two address lines are of opposite polarity.
A carbon nanotube and carbon nanotube transistor based nanoelectronic architecture, comprising:
- layers of orthogonal carbon nanotubes with electrically bistable and charge holding molecules at each crossing, the layers forming a dense array of RDG-CNFET devices and programmable interconnects, and
- voltage controlled nanotube addressing circuits on the four boundaries.
Dependencies are inferred from the claim text.