Enhancing metal/low-k interconnect reliability using a protection layer

A method of forming an interconnect structure, the method comprising:

• providing a layer of low-K dielectric material on a substrate;
• disposing a metal line directly on the low-K dielectric material;
• disposing a silicon nitride layer directly on the low-K dielectric material such that only the metal line is disposed between the layer of low-K dielectric material and the layer of silicon nitride;
• and
• disposing a protection layer having dielectric material on the silicon nitride layer such that the protection layer resides along at least one outer edge of the interconnect structure, the protection layer further comprising carbon nanotubes (CNTs) uniformly dispersed in the dielectric material.

A method of forming an interconnect structure, the method comprising:

• providing a layer of low-K dielectric material on a substrate;
• forming a metal line disposed directly on the low-K dielectric material;
• forming a silicon nitride layer disposed directly on the low-K dielectric material, wherein only the metal line is disposed between the layer of low-K dielectric material and the silicon nitride layer;
• and
• forming a protection layer on the silicon nitride layer and along at least one outer edge of the interconnect structure, the protection layer comprising a plurality of layers of dielectric material, wherein at least one of the layer includes carbon nanotubes (CNTs) uniformly dispersed in the one layer.

A method of forming an interconnect structure, the method comprising:

• providing a layer of low-K dielectric material on a substrate;
• forming a metal line disposed directly on the low-K dielectric material;
• forming a silicon nitride layer disposed directly on the low-K dielectric material, wherein only the metal line is disposed between the layer of low-K dielectric material and the silicon nitride layer;
• and
• forming a protection layer on the silicon nitride layer and along at least one outer edge of the interconnect structure, the protection layer comprising multiple layers of aligned carbon nanotubes (CNTs) and at least one layer of dielectric material, wherein the at least one layer includes the carbon nanotubes (CNTs) dispersed in the one layer.