Irregular-surface forming method using plasma-etching process, and electrode member
AssigneeLintec Corporation
InventorsSatoshi Naganawa, Takeshi Kondo
Life of this patent
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Abstract
A method is provided forming a predetermined irregular-surface pattern on a substrate. The method includes carrying out a plasma-etching process using a partly oxidized metal salt film having fine irregular-surface as a resist. In a first step, a metal salt film is formed on the substrate by coating a liquid material containing a metal salt. In a second step, a fine irregular-surface is formed on the metal salt film, and the metal salt film was converted into the resist by the partial oxidization. In a third step, a predetermined irregular-surface is formed on the substrate by carrying out the plasma-etching process to the substrate with the resist.
Claims15
A irregular-surface forming method using a plasma-etching process, which forms irregular-surface pattern on a substrate, and which uses a partially oxidized metal salt film having irregular-surface as a resist when the plasma-etching process is carried out, wherein the method is comprising the following first process to third process;
- (1) in the first process, a metal salt film is formed on the substrate by coating a liquid material containing a metal salt.
- (2) in the second process, a fine irregular-surface is formed on the metal salt film, and the metal salt film is converted into the resist by the partial oxidization.
- (3) in the third process, the predetermined irregular-surface is formed on the substrate by carrying out the plasma-etching process to the substrate with the resist.
An electrode component having a substrate produced by the irregular-surface forming method using a plasma-etching process, comprising the following first to third processes, and the electrode component is characterized in that the surface resistivity is within the range of 1.0×100 to 1.0×1010Ω/□;
- (1) in the first process, a metal salt film is formed on the substrate by coating a liquid material containing a metal salt.
- (2) in the second process, a fine irregular-surface is formed on the metal salt film, and the metal salt film is converted into the resist by the partial oxidization.
- (3) in the third process, a predetermined irregular-surface is formed on the substrate by carrying out the plasma-etching process to the substrate with the resist.
Dependencies are inferred from the claim text.