Method and system for forming non-manhattan patterns using variable shaped beam lithography

A method for fracturing or mask data preparation or proximity effect correction for shaped beam charged particle beam lithography, the method comprising the steps of:

• determining a target space width roughness (SWR);
• determining at least two series of shots, wherein each series has at least two shots, wherein each series of shots is capable of forming a continuous non-manhattan track on a surface, wherein adjacent tracks have a space between them, wherein the space between adjacent tracks comprises an actual SWR, and wherein the actual SWR nearly equals the target SWR;
• and
• outputting the series of shots.

A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography, the system comprising:

• a target line width roughness (LWR);
• a device capable of determining a series of two or more shots, wherein the series of shots are capable of forming a continuous non-manhattan track on a surface, and wherein an LWR of the track nearly equals the target LWR;
• and
• a device capable of outputting the series of two or more VSB shots.

A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography, the system comprising:

• a target space width roughness (SWR);
• a device capable of determining at least two series of at least two shots each, wherein each series of shots can form a continuous non-manhattan track on a surface, wherein the tracks have a space between them, and wherein the space between the tracks formed by the two series of shots comprises an actual SWR, and wherein the actual SWR nearly equals the target SWR;
• and
• a device capable of outputting the two series of two or more shots.