Layered Contact Structure For Solar Cells
AssigneeFerro Corporation
InventorsChandrashekhar S. Khadilkar, Srinivasan Sridharan, Paul S. Seman, Aziz S. Shaikh
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Abstract
Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass frit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon.
Claims12
1-3. (canceled)
A method of making a solar cell contact including a contact layer and a bulk layer, the method comprising:
- a. ink-jet printing, onto a silicon wafer, at least a portion of which bears an antireflective coating, a first ink layer having a solids loading of about 20 wt % to about 80 wt %, the ink comprising a silver plating solution and a glass frit, the glass frit having an average particle size of less than about 3 microns and a glass transition temperature of about 200° C. to about 700° C., and
- b. firing the wafer, wherein the glass frit fuses to form a glass and forms a contact layer to silicon.
A method of making a solar cell contact including a contact layer and a bulk layer, the method comprising:
- a. ink-jet printing, onto a silicon wafer, at least a portion of which bears an antireflective coating, a first conductive ink layer having a solids loading of about 20 wt % to about 80 wt %, the ink comprising glass frit, a silver plating solution, and a phosphorus composition including a phosphorus glass comprising at least 25 mol % P2O5, the glass frit having an average particle size of less than about 3 microns and a glass transition temperature of about 200° C. to about 700° C., and
- b. firing the wafer, wherein the glass frit fuses to form a glass and forms a contact layer to silicon.
A method of making a solar cell contact including a contact layer and a bulk layer, the method comprising:
- a. ink-jet printing, onto a silicon wafer, at least a portion of which bears an antireflective coating, a first conductive ink layer having a solids loading of about 20 wt % to about 80 wt %, the ink comprising a silver plating solution and phosphorus, wherein the phosphorus is present as a coating on silver, and glass frit having an average particle size of less than about 3 microns and a glass transition temperature of about 200° C. to about 700° C., and
- b. firing the wafer, wherein the glass frit fuses to form a glass and forms a contact layer to silicon.
Dependencies are inferred from the claim text.