Data decision method and memory
OwnerSang-Sik KIM, Jun-Rye RHO +1inventors
InventorsSang-Sik KIM, Jun-Rye RHO, Sang-Chul LEE
Life of this patent
Estimating the term…
Abstract
A data decision method including checking whether threshold voltages of a plurality of memory cells are greater than a first verification voltage, checking whether the threshold voltages of the plurality of memory cells are greater than a second verification voltage, wherein the second verification voltage is greater than the first verification voltage, and checking threshold voltages of memory cells adjacent to memory cells having threshold voltages greater than the first verification voltage and lower than the second verification voltage among the plurality of memory cells.
Claims22
A data decision method comprising:
- checking whether threshold voltages of a plurality of memory cells are greater than a first verification voltage;
- checking whether the threshold voltages of the plurality of memory cells are greater than a second verification voltage, wherein the second verification voltage is greater than the first verification voltage;
- and
- checking threshold voltages of memory cells adjacent to memory cells having threshold voltages greater than the first verification voltage and lower than the second verification voltage among the plurality of memory cells.
A memory comprising:
- a plurality of first memory cells;
- a plurality of second memory cells adjacent to the plurality of first memory cells;
- and
- a plurality of page buffers configured to read data of the first memory cells having threshold voltages that are lower than a first verification voltage as first data, read data of the first memory cells having threshold voltages that are greater than a second verification voltage as second data, and read data of the first memory cells having threshold voltages that is greater than the first verification voltage and lower than the second verification voltage in response to data stored in the plurality of second memory cells,
- wherein the second verification voltage is greater than the first verification voltage.
A data decision method comprising:
- setting a voltage level of a first verification voltage, and a voltage level of a second verification voltage, wherein the second verification voltage is greater than the first verification voltage;
- checking whether threshold voltages of a plurality of memory cells are greater than the first verification voltage;
- checking whether the threshold voltages of the plurality of memory cells are greater than the second verification voltage;
- and
- checking threshold voltages of memory cells adjacent to memory cells having threshold voltages greater than the first verification voltage and lower than the second verification voltage among the plurality of memory cells.
Dependencies are inferred from the claim text.