Nonvolatile semiconductor device

A nonvolatile memory device comprising:

• a voltage pump configured to generate a plurality of voltages having different voltage levels;
• N first switch units configured to select one of the plurality of voltages generated by the voltage pump and output a selected voltage as a first group voltage in response to an input row address;
• a second switch unit configured to select one of the plurality of voltages generated by the voltage pump and output a selected voltage as a second group voltage;
• a plurality of switch groups including N third switch units, respectively;
• and
• a plurality of global word lines connected to the third switch units, respectively,
• wherein the N third switch units included in each of the plurality of switch groups correspond to the N first switch units respectively, select either the first group voltage or the second group voltage in response to the input row address, and apply a selected voltage to connected global word lines.

A nonvolatile memory device comprising:

• a plurality of global word lines;
• a control unit configured to generate first to third control signals in response to an inputted row address;
• a first selection unit configured to select one or more voltages among a plurality of voltages of different levels and transfer the selected voltages to one or more first lines in response to the first control signal;
• a second selection signal configured to select one voltage among the multiple voltages in response to the second control signal;
• and
• a third selection unit configured to select one or more global word lines among the multiple global word lines and transfer voltages of the one or more first lines and transfer a voltage of the second line to global word lines other than the selected one or more global word lines in response to the third control signal.