Random-access memory with dynamically adjustable endurance and retention

A method for maintaining desired retention and endurance characteristics of a memory cell within a memory device, the method comprising:

• determining a current density and time period for an access-related operation applied to the memory cell that together produce a state change within the memory cell and that produce a specified retention characteristic of the memory cell;
• and
• during each access-related operation carried out on the memory cell,
• applying the current density for the period of time determined for the access-related operation.

A memory device comprising:

• an array of memory cells, each including a volume of material that can stably exhibit at least two different physical states that are each associated with a different data value;
• word lines that each interconnects a row of memory cells within the array of memory cells to a word-line driver;
• bit lines that each interconnects a column of memory cells, through a bit-line driver, to a write driver and data-input medium;
• and
• a write controller that controls the word-line driver, the bit-line driver, and a write driver, during a WRITE operation, to write a data value from the data-input medium to an activated memory cell and to impart a specified retention to the memory cell.