Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
Life of this patent
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Abstract
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.
Claims15
A display device comprising:
- a gate electrode over a substrate;
- a gate insulating layer over the gate electrode;
- an oxide semiconductor layer over the gate insulating layer;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a protective insulating layer over the oxide semiconductor layer;
- an organic insulating layer over the protective insulating layer;
- and
- a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in direct contact with one of the source electrode and the drain electrode through a contact hole opened in the protective insulating layer and the organic insulating layer.
A display device comprising:
- a gate electrode over a substrate;
- a gate insulating layer over the gate electrode;
- an oxide semiconductor layer over the gate insulating layer;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a protective insulating layer over the oxide semiconductor layer;
- an organic insulating layer over the protective insulating layer;
- a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in direct contact with one of the source electrode and the drain electrode through a contact hole opened in the protective insulating layer and the organic insulating layer;
- and
- a liquid crystal layer over the pixel electrode layer.
A display device comprising:
- a gate electrode over a substrate;
- a gate insulating layer over the gate electrode;
- an oxide semiconductor layer over the gate insulating layer;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a protective insulating layer over the oxide semiconductor layer;
- an organic insulating layer over the protective insulating layer;
- a pixel electrode layer over the organic insulating layer, wherein the pixel electrode layer is in direct contact with one of the source electrode and the drain electrode through a contact hole opened in the protective insulating layer and the organic insulating layer;
- and
- a light-emitting layer over the pixel electrode layer.
Dependencies are inferred from the claim text.