Method of detecting defects in a semiconductor device and semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong Min Cho, Dong-Ryul Lee
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Abstract
A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.
Claims20
A method of detecting a defect of a semiconductor device, the method comprising:
- forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively;
- obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region;
- obtaining cell data by irradiating the electron beam into the cell array region;
- and
- detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.
A method of detecting a defect of a semiconductor device, the method comprising:
- forming test patterns and unit cell patterns in the a test region and a cell array region of a substrate, respectively, the test region including a normal region, a bridge region, and a not-open region;
- irradiating an electron beam into the test region and the cell array region;
- measuring a number of emitted electrons from each of the regions in the test region by the electron beam;
- measuring a number of emitted electrons from the cell array region by the electron beam;
- and
- detecting defects of the unit cell patterns by comparing the measured number of emitted electrons from the cell array region and the test region.
(canceled)
Dependencies are inferred from the claim text.