Semiconductor device

A device comprising:

• a plurality of semiconductor chips stacked in a stacking direction, each of the semiconductor chips including a circuit element, a first through electrode and a second through electrode connected to the circuit element, and a third through electrode,
• wherein the first through electrode, the second through electrode, and the third through electrode are respectively connected to the first through electrode, the second through electrode, and the third through electrode formed in an adjacent semiconductor chip in the stacking direction so as to form a first power supply path, a second power supply path, and a third power supply path, respectively,
• one of the first power supply path and the second power supply path is connected to a first power source terminal provided for the semiconductor chip located on a first side of the device in the stacking direction,
• the third power supply path is connected to a second power source terminal provided for the semiconductor chip located on the first side in the stacking direction, and
• the third power supply path is connected to an end of another one of the first power supply path and the second power supply path on the semiconductor chip located on a second side of the device in the stacking direction.

A device comprising:

• first and second power supply terminals;
• a plurality of semiconductor chips stacked with each other, each of the semiconductor chip including a circuit element and a plurality of through electrodes;
• and
• a plurality of power paths each connecting the first power supply terminal to the second power supply terminal with an intervention of the circuit element of an associated one of the semiconductor chip, the number of through electrodes included in the power paths being equal to each other.