Microelectronic devices with through-silicon vias and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsKyle K. Kirby, Kunal R. Parekh, Philip J. Ireland, Sarah A. Niroumand
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Abstract
Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The method can further include lining the sidewall with a dielectric material, depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten, and filling the cavity with a polysilicon material.
Claims35
A method for forming tungsten through-silicon vias, comprising:
- forming an opening having a sidewall extending through at least a portion of a substrate on which electrical components have been formed;
- forming a dielectric liner along the sidewall of the opening;
- forming a tungsten conductor along the dielectric liner, wherein the tungsten conductor partially fills the opening such that a cavity extends into the tungsten conductor;
- and
- depositing polysilicon into the cavity in the tungsten conductor.
A method for forming tungsten through-silicon vias, comprising:
- forming an opening having a sidewall, wherein the opening extends through at least a first interlayer dielectric structure and through at least a portion of a substrate on which microelectronic components have been formed;
- lining the sidewall with a dielectric material;
- depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten;
- and
- filling the cavity with polysilicon.
A method of fabricating semiconductor devices, comprising:
- constructing a plurality of dies having integrated circuitry, wherein each die has through-silicon via (TSV) regions sized for a single copper TSV;
- and
- forming an array of a plurality of tungsten TSVs in individual TSV regions, wherein each tungsten TSV has a dielectric liner and a tungsten conductor.
A microelectronic device, comprising:
- a substrate;
- electrical components formed on the substrate;
- and
- a tungsten through-silicon via (TSV) extending completely through the first and second interlayer dielectric structures and at least partially through a thickness of the substrate, wherein the tungsten TSV has a tungsten conductor and polysilicon within the tungsten conductor.
Dependencies are inferred from the claim text.