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US 2012/0267755 A1Published application
Semiconductor device with electric fuse having a flowing-out region
AssigneeRenesas Electronics Corporation
InventorTakehiro UEDA
Life of this patent
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Abstract
A method for cutting an electric fuse formed on a semiconductor substrate by applying a predetermined electric voltage between a first interconnect and a second interconnect to flow an electric current in the electric fuse such that the electric conductor is flowed toward outside from the second interconnect to form a void region between the via and the first interconnects or in the via.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate;
- a first interconnect formed over the semiconductor substrate;
- a second interconnect formed over the semiconductor substrate and the first interconnect;
- an first interlayer insulating film formed between the first interconnect and the second interconnect;
- and
- a via formed in the interlayer insulating film;
- wherein
- the first interconnect and the second interconnect has an overlapping area in a plane view,
- the via is formed in the overlapping area,
- the via is connected to the second interconnect and disconnected to the first interconnect,
- the second interconnect has a flowing-out region which is formed around the via in a plane view, and
- the first interconnect, the second interconnect and the via comprises an electric fuse.
9 more elements
Dependencies are inferred from the claim text.