Independently voltage controlled volume of silicon on a silicon on insulator chip

A method for creating an independently voltage controlled silicon region in a semiconductor chip comprising:

• creating a deep implant of opposite doping to a doping of a substrate of the semiconductor chip;
• creating a buried oxide (BOX) in the semiconductor chip, the deep implant being entirely under the BOX;
• creating a deep trench isolation at least as deep in the substrate as the deep implant and intersecting both the deep implant and the BOX;
• the deep implant forming a bottom of the independently voltage controlled silicon region;
• the BOX forming a top of the independently voltage controlled silicon region;
• the deep trench isolation forming walls of the independently voltage controlled silicon region, thereby completely isolating the independently voltage controlled silicon region from a remainder of the substrate;
• and
• creating a contact structure to electrically connect the independently voltage controlled silicon region to a contact.