Semiconductor device including schottky barrier junction and pn junction

A semiconductor device, comprising:

• a first conductivity-type semiconductor stack including a plurality of recesses which extend from a first principal surface toward a second principal surface and have bottoms not reaching the second principal surface, the first and second principal surfaces facing each other;
• a plurality of second conductivity-type anode regions which are embedded at a distance from one another in the first principal surface, each of which has a part of an outer edge region exposed to a side surface of the corresponding recess;
• an anode electrode which is provided on the first principal surface of the semiconductor stack to form a Schottky barrier junction with the semiconductor stack in a region where the plurality of anode regions are not formed and form ohmic junctions with the plurality of anode regions;
• and
• a cathode electrode provided on the second principal surface of the semiconductor stack.