Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer
AssigneeSamsung Electronics Co., Ltd.
InventorsKiseok Moon, Xueti Tang, Mohamad Towfik Krounbi
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Abstract
A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.
Claims31
A method for fabricating a magnetic junction usable in a magnetic memory comprising:
- providing a pinned layer including at least one ferromagnetic layer;
- providing an engineered nonmagnetic tunneling barrier layer, the engineered nonmagnetic tunneling barrier layer having a tuned resistance area product;
- and
- providing a free layer including at least an additional ferromagnetic layer, the nonmagnetic tunneling barrier layer residing between the pinned layer and the free layer, the free layer configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements.
A method for magnetic memory comprising:
- providing a plurality of magnetic memory cells, each of the plurality of magnetic memory cells including at least one magnetic memory element at least one selection device, the step of providing the at least one magnetic memory element further including
- providing a pinned layer for each of the at least one magnetic memory element, the pinned including at least one ferromagnetic layer;
- providing an engineered nonmagnetic tunneling barrier layer for each of the at least one magnetic memory element, the engineered nonmagnetic tunneling barrier layer having a tuned resistance area product;
- and
- providing a free layer for each of the at least one magnetic memory element, the free layer including at least an additional ferromagnetic layer, the nonmagnetic tunneling barrier layer residing between the pinned layer and the free layer, the free layer configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements;
- providing at least one bit line coupled with the plurality of magnetic memory cells;
- and
- providing at least one word line coupled with the plurality of magnetic memory cells.
A magnetic junction usable in a magnetic memory comprising:
- a pinned layer including at least one ferromagnetic layer;
- an engineered nonmagnetic tunneling barrier layer, the engineered nonmagnetic tunneling barrier layer having a tuned resistance area product, the engineered nonmagnetic tunneling barrier layer including radio-frequency deposited oxide layer and a natural oxide layer;
- and
- a free layer including at least an additional ferromagnetic layer, the nonmagnetic tunneling barrier layer residing between the pinned layer and the free layer, the free layer configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic memory element of the plurality of magnetic memory elements.
Dependencies are inferred from the claim text.